Band insulator to Mott insulator transition in 1T-TaS<sub>2</sub>.

Wang, Y D; Yao, W L; Xin, Z M; Han, T T; Wang, Z G; Chen, L; Cai, C; Li, Yuan; Zhang, Y

Band insulator to Mott insulator transition in 1T-TaS₂.

Wang, Y D; Yao, W L; Xin, Z M; Han, T T; Wang, Z G; Chen, L; Cai, C; Li, Yuan; Zhang, Y.

Afiliação

Wang YD; International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
Yao WL; International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
Xin ZM; International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
Han TT; International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
Wang ZG; International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
Chen L; International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
Cai C; International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
Li Y; International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China.
Zhang Y; Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China.

Nat Commun ; 11(1): 4215, 2020 Aug 24.

Article em En | MEDLINE | ID: mdl-32839433

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2020 Tipo de documento: Article País de afiliação: China País de publicação: Reino Unido

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