Double-gate thin film transistor with suspended-gate applicable to tactile force sensor.

Nguyen, An Hoang-Thuy; Nguyen, Manh-Cuong; Cho, Seongyong; Nguyen, Anh-Duy; Kim, Hyewon; Seok, Yeongcheol; Yoon, Jiyeon; Choi, Rino

Nguyen, An Hoang-Thuy; Nguyen, Manh-Cuong; Cho, Seongyong; Nguyen, Anh-Duy; Kim, Hyewon; Seok, Yeongcheol; Yoon, Jiyeon; Choi, Rino.

Afiliação

Nguyen AH; Department of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea.
Nguyen MC; Department of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea.
Cho S; Department of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea.
Nguyen AD; Department of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea.
Kim H; Department of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea.
Seok Y; Department of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea.
Yoon J; Department of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea.
Choi R; Department of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea. rino.choi@inha.ac.kr.

Nano Converg ; 7(1): 31, 2020 Sep 15.

Article em En | MEDLINE | ID: mdl-32930906

Palavras-chave

Air gap; Mechanical sensors; Membrane gate; Photoresist sacrifice; Tactile force sensor

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Converg Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Coréia do Sul

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