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Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness.
Dai, Chaoqi; Huo, Changhe; Qi, Shaocheng; Dai, Mingzhi; Webster, Thomas; Xiao, Han.
Afiliação
  • Dai C; College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, People's Republic of China.
  • Huo C; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
  • Qi S; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
  • Dai M; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
  • Webster T; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
  • Xiao H; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Int J Nanomedicine ; 15: 8037-8043, 2020.
Article em En | MEDLINE | ID: mdl-33116516
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Transistores Eletrônicos / Nanotecnologia / Nanopartículas Idioma: En Revista: Int J Nanomedicine Ano de publicação: 2020 Tipo de documento: Article País de publicação: Nova Zelândia
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Transistores Eletrônicos / Nanotecnologia / Nanopartículas Idioma: En Revista: Int J Nanomedicine Ano de publicação: 2020 Tipo de documento: Article País de publicação: Nova Zelândia