Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage.

Rocci, Mirko; Suri, Dhavala; Kamra, Akashdeep; Takamura, Yota; Nemes, Norbert M; Martinez, Jose L; Hernandez, Mar Garcia; Moodera, Jagadeesh S

Rocci, Mirko; Suri, Dhavala; Kamra, Akashdeep; Takamura, Yota; Nemes, Norbert M; Martinez, Jose L; Hernandez, Mar Garcia; Moodera, Jagadeesh S.

Afiliação

Rocci M; Francis Bitter Magnet Laboratory and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Suri D; NEST, Instituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa, Italy.
Kamra A; Francis Bitter Magnet Laboratory and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Gilvânia Vilela; Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway.
Takamura Y; Francis Bitter Magnet Laboratory and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Nemes NM; Física de Materiais, Universidade de Pernambuco, Recife 50720-001, Brazil.
Martinez JL; School of Engineering, Tokyo Institute of Technology, Tokyo 152-8550, Japan.
Hernandez MG; GFMC, Departamento de Física de Materiales, Universidad Complutense de Madrid, E-28040 Madrid, Spain.
Moodera JS; Instituto de Ciencia de Materiales de Madrid, C.S.I.C., Cantoblanco, E-28049 Madrid, Spain.

Nano Lett ; 21(1): 216-221, 2021 Jan 13.

Article em En | MEDLINE | ID: mdl-33275436

Palavras-chave

Critical current; Electroresistance; Gate tunability; NbN; Superconducting nanobridges; Vortices

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Estados Unidos

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