Enhancement of the Retention Characteristics in Solution-Processed Ferroelectric Memory Transistor with Dual-Gate Structure.

Boampong, Amos Amoako; Cho, Jae-Hyeok; Choi, Yoonseuk; Kim, Min-Hoi

Boampong, Amos Amoako; Cho, Jae-Hyeok; Choi, Yoonseuk; Kim, Min-Hoi.

Afiliação

Boampong AA; Department of Electronic Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
Cho JH; Department of Creative Convergence Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
Choi Y; Department of Electronic Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
Kim MH; Department of Creative Convergence Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.

J Nanosci Nanotechnol ; 21(3): 1766-1771, 2021 Mar 01.

Article em En | MEDLINE | ID: mdl-33404445

Texto completo

Adicionar na Minha BVS

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2021 Tipo de documento: Article País de publicação: Estados Unidos

Texto completo

Adicionar na Minha BVS

Imprimir

XML

PubMed Links

Buscar no Google