Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics.

Zhang, Haochen; Huang, Chen; Song, Kang; Yu, Huabin; Xing, Chong; Wang, Danhao; Liu, Zhongling; Sun, Haiding

Zhang, Haochen; Huang, Chen; Song, Kang; Yu, Huabin; Xing, Chong; Wang, Danhao; Liu, Zhongling; Sun, Haiding.

Afiliação

Zhang H; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
Huang C; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
Song K; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
Yu H; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
Xing C; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
Wang D; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
Liu Z; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
Sun H; School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.

Rep Prog Phys ; 84(4)2021 Mar 26.

Article em En | MEDLINE | ID: mdl-33477132

Palavras-chave

band engineering; carrier behavior control; graded AlGaN alloys; polarization-induced doping; power electronics; ultraviolet optoelectronics

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Rep Prog Phys Ano de publicação: 2021 Tipo de documento: Article País de publicação: Reino Unido

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