Gate-tunable quantum dot formation between localized-resonant states in a few-layer MoS2.
Nanotechnology
; 32(19): 195207, 2021 May 07.
Article
em En
| MEDLINE
| ID: mdl-33530078
ABSTRACT
We demonstrate a gate-tunable quantum dot (QD) located between two potential barriers defined in a few-layer MoS2. Although both local gates used to tune the potential barriers have disorder-induced QDs, we observe diagonal current stripes in current resonant islands formed by the alignment of the Fermi levels of the electrodes and the energy levels of the disorder-induced QDs, as evidence of the gate-tunable QD. We demonstrate that the charging energy of the designed QD can be tuned in the range of 2-6 meV by changing the local-gate voltages in â¼1 V.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Ano de publicação:
2021
Tipo de documento:
Article