Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6.

Ren, Wen-Ning; Jin, Kui-Juan; Wang, Jie-Su; Ge, Chen; Guo, Er-Jia; Ma, Cheng; Wang, Can; Xu, Xiulai

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr₂Ge₂Te₆.

Ren, Wen-Ning; Jin, Kui-Juan; Wang, Jie-Su; Ge, Chen; Guo, Er-Jia; Ma, Cheng; Wang, Can; Xu, Xiulai.

Afiliação

Ren WN; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Jin KJ; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
Wang JS; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China. kjjin@iphy.ac.cn.
Ge C; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China. kjjin@iphy.ac.cn.
Guo EJ; Songshan Lake Materials Laboratory, Dongguan, 523808, China. kjjin@iphy.ac.cn.
Ma C; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Wang C; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Xu X; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.

Sci Rep ; 11(1): 2744, 2021 Feb 02.

Article em En | MEDLINE | ID: mdl-33531569

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China País de publicação: Reino Unido

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