Computational Modeling of 2D Materials under High Pressure and Their Chemical Bonding: Silicene as Possible Field-Effect Transistor.

Tantardini, Christian; Kvashnin, Alexander G; Gatti, Carlo; Yakobson, Boris I; Gonze, Xavier

Tantardini, Christian; Kvashnin, Alexander G; Gatti, Carlo; Yakobson, Boris I; Gonze, Xavier.

Afiliação

Tantardini C; Skolkovo Institute of Science and Technology, 3 Nobel Street, 121025 Moscow, Russian Federation.
Kvashnin AG; Institute of Solid State Chemistry and Mechanochemistry SB RAS, 630128 Novosibirsk, Russian Federation.
Gatti C; Skolkovo Institute of Science and Technology, 3 Nobel Street, 121025 Moscow, Russian Federation.
Yakobson BI; CNR - Consiglio Nazionale delle Ricerche, SCITEC - Istituto di Scienze e Tecnologie Chimiche "Giulio Natta", Sezione di via Golgi, 19, 20133 Milan, Italy.
Gonze X; Department of Chemistry, Taif University, Al Hawiyah, Taif 26571, Saudi Arabia.

ACS Nano ; 15(4): 6861-6871, 2021 Apr 27.

Article em En | MEDLINE | ID: mdl-33730478

Palavras-chave

2D structures; Abinit; field-effect transistor; honeycomb; pressure sensors; silicene

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2021 Tipo de documento: Article