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Impact of 2D-3D Heterointerface on Remote Epitaxial Interaction through Graphene.
Kim, Hyunseok; Lu, Kuangye; Liu, Yunpeng; Kum, Hyun S; Kim, Ki Seok; Qiao, Kuan; Bae, Sang-Hoon; Lee, Sangho; Ji, You Jin; Kim, Ki Hyun; Paik, Hanjong; Xie, Saien; Shin, Heechang; Choi, Chanyeol; Lee, June Hyuk; Dong, Chengye; Robinson, Joshua A; Lee, Jae-Hyun; Ahn, Jong-Hyun; Yeom, Geun Young; Schlom, Darrell G; Kim, Jeehwan.
Afiliação
  • Kim H; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Lu K; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Liu Y; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Kum HS; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Kim KS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Qiao K; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Bae SH; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Lee S; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Ji YJ; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Kim KH; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Paik H; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Xie S; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States.
  • Shin H; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States.
  • Choi C; Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States.
  • Lee JH; School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea.
  • Dong C; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
  • Robinson JA; Neutron Science Division, Korea Atomic Energy Research Institute, Daejeon 34057, Republic of Korea.
  • Lee JH; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Ahn JH; 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Yeom GY; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Schlom DG; 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
  • Kim J; Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea.
ACS Nano ; 15(6): 10587-10596, 2021 Jun 22.
Article em En | MEDLINE | ID: mdl-34081854
ABSTRACT
Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes. In addition, the remote interaction of atoms and adatoms through two-dimensional (2D) materials in remote epitaxy allows investigation and utilization of electrical/chemical/physical coupling of bulk (3D) materials via 2D materials (3D-2D-3D coupling). Here, we unveil the respective roles and impacts of the substrate material, graphene, substrate-graphene interface, and epitaxial material for electrostatic coupling of these materials, which governs cohesive ordering and can lead to single-crystal epitaxy in the overlying film. We show that simply coating a graphene layer on wafers does not guarantee successful implementation of remote epitaxy, since atomically precise control of the graphene-coated interface is required, and provides key considerations for maximizing the remote electrostatic interaction between the substrate and adatoms. This was enabled by exploring various material systems and processing conditions, and we demonstrate that the rules of remote epitaxy vary significantly depending on the ionicity of material systems as well as the graphene-substrate interface and the epitaxy environment. The general rule of thumb discovered here enables expanding 3D material libraries that can be stacked in freestanding form.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Estados Unidos