Characterizing the voltage fluctuations driven by a cluster of ligand-gated channels.

ABSTRACT

In this paper we present the properties of the voltage fluctuations driven by a cluster of ligand-gated channels. First, the second-order moment of the voltage is expressed in form of the integrated resistance and the random force. Then the power spectrum of the voltage noise is obtained analytically, and it is proved to have the 1/ω^{4}-form. Its mechanism lies in that the randomness of the voltage fluctuation is weaker than channel (conductance) noise, which can be approximately described by the Ornstein-Ulenbeck process.