Pt/(InGa)2O3/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm.

Wang, Zhao; Zheng, Wei; Hu, Qichang; Lin, Shiyan; Wu, Yibing; Ye, Dapeng

Pt/(InGa)₂O₃/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm.

Wang, Zhao; Zheng, Wei; Hu, Qichang; Lin, Shiyan; Wu, Yibing; Ye, Dapeng.

Afiliação

Wang Z; College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China.
Zheng W; State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China.
Hu Q; College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China.
Lin S; National Engineering Research Center for Optoelectronic Crystalline Materials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.
Wu Y; College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China.
Ye D; College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China.

ACS Appl Mater Interfaces ; 13(37): 44568-44576, 2021 Sep 22.

Article em En | MEDLINE | ID: mdl-34514792

Palavras-chave

(InxGa1−x)2O3; 280 nm; band gap adjustment; photovoltaic photodetector; solar-blind ultraviolet

Texto completo

Adicionar na Minha BVS

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos

Texto completo

Adicionar na Minha BVS

Imprimir

XML

PubMed Links

Buscar no Google