Near-infrared image recovery based on modulation instability in CdZnTe:V.

ABSTRACT

We propose a near-infrared image recovery method based on modulation instability in the photorefractive semiconductor CdZnTeV. The formation mechanism of modulation instability in CdZnTeV is discussed, and the theoretical gain model is derived. Theoretical results of optical image recovery at 1 µm and 1.5 µm wavelengths demonstrate that the maximum cross-correlation gain is 2.6 with a signal to noise intensity ratio of 0.1. These results suggest that our method could be one of potential aids for near-infrared imaging.