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Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope.
Wang, Jingli; Cai, Lejuan; Chen, Jiewei; Guo, Xuyun; Liu, Yuting; Ma, Zichao; Xie, Zhengdao; Huang, Hao; Chan, Mansun; Zhu, Ye; Liao, Lei; Shao, Qiming; Chai, Yang.
Afiliação
  • Wang J; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.
  • Cai L; Frontier Institute of Chip and System, Fudan University, Shanghai, P. R. China.
  • Chen J; The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057 P. R. China.
  • Guo X; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.
  • Liu Y; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.
  • Ma Z; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.
  • Xie Z; Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China.
  • Huang H; Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China.
  • Chan M; School of Physics and Electronics, Hunan University, Changsha, Hunan, P. R. China.
  • Zhu Y; Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China.
  • Liao L; Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China.
  • Shao Q; Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China.
  • Chai Y; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.
Sci Adv ; 7(44): eabf8744, 2021 Oct 29.
Article em En | MEDLINE | ID: mdl-34705513

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2021 Tipo de documento: Article País de publicação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2021 Tipo de documento: Article País de publicação: Estados Unidos