High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications.

Sung, Jae-Young; Jeong, Jun-Kyo; Ko, Woon-San; Byun, Jun-Ho; Lee, Hi-Deok; Lee, Ga-Won

Sung, Jae-Young; Jeong, Jun-Kyo; Ko, Woon-San; Byun, Jun-Ho; Lee, Hi-Deok; Lee, Ga-Won.

Afiliação

Sung JY; Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea.
Jeong JK; Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea.
Ko WS; Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea.
Byun JH; Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea.
Lee HD; Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea.
Lee GW; Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea.

Micromachines (Basel) ; 12(11)2021 Oct 27.

Article em En | MEDLINE | ID: mdl-34832728

Palavras-chave

deuterium high pressure anneal; flash memory; retention; silicon nitride

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2021 Tipo de documento: Article

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