Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques.

Gallagher, James C; Ebrish, Mona A; Porter, Matthew A; Jacobs, Alan G; Gunning, Brendan P; Kaplar, Robert J; Hobart, Karl D; Anderson, Travis J

Gallagher, James C; Ebrish, Mona A; Porter, Matthew A; Jacobs, Alan G; Gunning, Brendan P; Kaplar, Robert J; Hobart, Karl D; Anderson, Travis J.

Afiliação

Gallagher JC; U.S. Naval Research Laboratory, 4555 Overlook Ave SW, Washington, DC, 20375, USA. james.gallagher@nrl.navy.mil.
Ebrish MA; NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory, Washington, DC, 20375, USA.
Porter MA; Naval Postgraduate School, 1 University Dr, Monterey, CA, 93943, USA.
Jacobs AG; NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory, Washington, DC, 20375, USA.
Gunning BP; Sandia National Laboratories, MS 1086, PO Box 5800, Albuquerque, NM, 87185, USA.
Kaplar RJ; Sandia National Laboratories, MS 1086, PO Box 5800, Albuquerque, NM, 87185, USA.
Hobart KD; U.S. Naval Research Laboratory, 4555 Overlook Ave SW, Washington, DC, 20375, USA.
Anderson TJ; U.S. Naval Research Laboratory, 4555 Overlook Ave SW, Washington, DC, 20375, USA.

Sci Rep ; 12(1): 658, 2022 Jan 13.

Article em En | MEDLINE | ID: mdl-35027582

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Reino Unido

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