Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example.

Wei, Zhaoxiang; Fu, Hao; Yan, Xiaowen; Li, Sheng; Zhang, Long; Wei, Jiaxing; Liu, Siyang; Sun, Weifeng; Wu, Weili; Bai, Song

Wei, Zhaoxiang; Fu, Hao; Yan, Xiaowen; Li, Sheng; Zhang, Long; Wei, Jiaxing; Liu, Siyang; Sun, Weifeng; Wu, Weili; Bai, Song.

Afiliação

Wei Z; National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
Fu H; National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
Yan X; National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
Li S; National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
Zhang L; National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
Wei J; National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
Liu S; National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
Sun W; National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
Wu W; Nanjing Electronic Devices Institute, Nanjing 100048, China.
Bai S; Nanjing Electronic Devices Institute, Nanjing 100048, China.

Materials (Basel) ; 15(2)2022 Jan 08.

Article em En | MEDLINE | ID: mdl-35057175

Palavras-chave

SiC MOSFET; avalanche; degradation; different device structure; trench gate

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China País de publicação: Suíça

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