Raman Linewidth Contributions from Four-Phonon and Electron-Phonon Interactions in Graphene.

Han, Zherui; Yang, Xiaolong; Sullivan, Sean E; Feng, Tianli; Shi, Li; Li, Wu; Ruan, Xiulin

Han, Zherui; Yang, Xiaolong; Sullivan, Sean E; Feng, Tianli; Shi, Li; Li, Wu; Ruan, Xiulin.

Afiliação

Han Z; School of Mechanical Engineering and the Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907-2088, USA.
Yang X; Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China.
Sullivan SE; College of Physics, and Center of Quantum Materials and Devices, Chongqing University, Chongqing 401331, China.
Feng T; Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712, USA.
Shi L; Department of Mechanical Engineering, The University of Utah, Salt Lake City, Utah 84112, USA.
Li W; Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712, USA.
Ruan X; Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China.

Phys Rev Lett ; 128(4): 045901, 2022 Jan 28.

Article em En | MEDLINE | ID: mdl-35148139

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Estados Unidos

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