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Role of oxygen vacancies in colossal polarization in SmFeO3-δ thin films.
Li, Hao; Yang, Yali; Deng, Shiqing; Zhang, Linxing; Cheng, Sheng; Guo, Er-Jia; Zhu, Tao; Wang, Huanhua; Wang, Jiaou; Wu, Mei; Gao, Peng; Xiang, Hongjun; Xing, Xianran; Chen, Jun.
Afiliação
  • Li H; Beijing Advanced Innovation Center for Materials Genome Engineering, and Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China.
  • Yang Y; Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China.
  • Deng S; Shanghai Qizhi Institution, Shanghai 200232, China.
  • Zhang L; Beijing Advanced Innovation Center for Materials Genome Engineering, and Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China.
  • Cheng S; School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China.
  • Guo EJ; Key Laboratory of Advanced Materials of Ministry of Education, Tsinghua University, Beijing 100084, China.
  • Zhu T; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
  • Wang H; Spallation Neutron Source Science Center, Dongguan 523803, China.
  • Wang J; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Wu M; Spallation Neutron Source Science Center, Dongguan 523803, China.
  • Gao P; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Xiang H; Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China.
  • Xing X; Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China.
  • Chen J; Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
Sci Adv ; 8(13): eabm8550, 2022 Apr.
Article em En | MEDLINE | ID: mdl-35363530
ABSTRACT
The orthorhombic rare-earth manganates and ferrites multiferroics are promising candidates for the next generation multistate spintronic devices. However, their ferroelectric polarization is small, and transition temperature is far below room temperature (RT). The improvement of ferroelectricity remains challenging. Here, through the subtle strain and defect engineering, an RT colossal polarization of 4.14 µC/cm2 is achieved in SmFeO3-δ films, which is two orders of magnitude larger than its bulk and is also the largest one among the orthorhombic rare-earth manganite and ferrite family. Meanwhile, its RT magnetism is uniformly distributed in the film. Combining the integrated differential phase-contrast imaging and density functional theory calculations, we reveal the origin of this superior ferroelectricity in which the purposely introduced oxygen vacancies in the Fe-O layer distorts the FeO6 octahedral cage and drives the Fe ion away from its high-symmetry position. The present approach can be applied to improve ferroelectric properties for multiferroics.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China