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Oxidizing Hexagonal Boron Nitride into Fluorescent Structures by Photodissociated Directional Oxygen Radical.
Liang, Chenhui; Sha, Yating; Huang, Jingxian; Zhang, Chao; Su, Shubin; Li, Hao; Wang, Guohua; Liu, Kaihui; Wang, Fei; Wang, Haomin; Luo, Weidong; Chen, Guorui; Wu, Tianru; Xie, Xiaoming; Qian, Dong; Tao, Haihua.
Afiliação
  • Liang C; Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240 Shanghai, China.
  • Sha Y; Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240 Shanghai, China.
  • Huang J; Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240 Shanghai, China.
  • Zhang C; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China.
  • Su S; State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240 Shanghai, China.
  • Li H; State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240 Shanghai, China.
  • Wang G; Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240 Shanghai, China.
  • Liu K; State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, 100871 Beijing, China.
  • Wang F; International Laboratory for Quantum Functional Materials of Henan, School of Physics and Microelectronics, Zhengzhou University, 450001 Zhengzhou, China.
  • Wang H; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China.
  • Luo W; Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240 Shanghai, China.
  • Chen G; Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240 Shanghai, China.
  • Wu T; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China.
  • Xie X; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China.
  • Qian D; Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240 Shanghai, China.
  • Tao H; Tsung-Dao Lee Institute, Shanghai Jiao Tong University, 200240 Shanghai, China.
J Phys Chem Lett ; 13(15): 3369-3376, 2022 Apr 21.
Article em En | MEDLINE | ID: mdl-35404049
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Phys Chem Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Phys Chem Lett Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos