Carbon and Manganese in Semi-Insulating Bulk GaN Crystals.
Materials (Basel)
; 15(7)2022 Mar 23.
Article
em En
| MEDLINE
| ID: mdl-35407712
ABSTRACT
Co-doping with manganese and carbon was performed in gallium nitride grown by halide vapor phase epitaxy method. Native seeds of high structural quality were used. The crystallized material was examined in terms of its structural, optical, and electrical properties. For that purpose, different characterization methods:
x-ray diffraction, Raman spectroscopy, low-temperature photoluminescence, and temperature-dependent Hall effect measurements, were applied. The physical properties of the co-doped samples were compared with the properties of crystals grown in the same reactor, on similar seeds, but doped only with manganese or carbon. A comparison of the electrical and optical properties allowed to determine the role of manganese and carbon in doped and co-doped gallium nitride crystals.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Materials (Basel)
Ano de publicação:
2022
Tipo de documento:
Article
País de afiliação:
Polônia
País de publicação:
CH
/
SUIZA
/
SUÍÇA
/
SWITZERLAND