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Highly stretchable organic electrochemical transistors with strain-resistant performance.
Chen, Jianhua; Huang, Wei; Zheng, Ding; Xie, Zhaoqian; Zhuang, Xinming; Zhao, Dan; Chen, Yao; Su, Ning; Chen, Hongming; Pankow, Robert M; Gao, Zhan; Yu, Junsheng; Guo, Xugang; Cheng, Yuhua; Strzalka, Joseph; Yu, Xinge; Marks, Tobin J; Facchetti, Antonio.
Afiliação
  • Chen J; Department of Chemical Science and Technology, Yunnan University, Kunming, P. R. China.
  • Huang W; Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.
  • Zheng D; Department of Materials Science and Engineering and the Shenzhen Key Laboratory for Printed Organic Electronics, Southern University of Science and Technology (SUSTech), Shenzhen, P. R. China.
  • Xie Z; Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA. whuang@uestc.edu.cn.
  • Zhuang X; School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, P. R. China. whuang@uestc.edu.cn.
  • Zhao D; Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA. ding.zheng@northwestern.edu.
  • Chen Y; State Key Laboratory of Structural Analysis for Industrial Equipment, Department of Engineering Mechanics, Dalian University of Technology, Dalian, P. R. China. zxie@dlut.edu.cn.
  • Su N; Department of Biomedical Engineering, City University of Hong Kong, Hong Kong, P. R. China. zxie@dlut.edu.cn.
  • Chen H; Ningbo Institute, Dalian University of Technology, Ningbo, P. R. China. zxie@dlut.edu.cn.
  • Pankow RM; Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.
  • Gao Z; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, P. R. China.
  • Yu J; Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.
  • Guo X; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, P. R. China.
  • Cheng Y; Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.
  • Strzalka J; Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.
  • Yu X; Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.
  • Marks TJ; Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA.
  • Facchetti A; Department of Biomedical Engineering, City University of Hong Kong, Hong Kong, P. R. China.
Nat Mater ; 21(5): 564-571, 2022 05.
Article em En | MEDLINE | ID: mdl-35501364
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Transistores Eletrônicos / Eletrônica Idioma: En Revista: Nat Mater Assunto da revista: CIENCIA / QUIMICA Ano de publicação: 2022 Tipo de documento: Article País de publicação: Reino Unido
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Transistores Eletrônicos / Eletrônica Idioma: En Revista: Nat Mater Assunto da revista: CIENCIA / QUIMICA Ano de publicação: 2022 Tipo de documento: Article País de publicação: Reino Unido