Second-Harmonic Generation-Positive Na2Ga2SiS6 with a Broad Band Gap and a High Laser Damage Threshold.

Xie, Wenlong; Yun, Yihan; Deng, Lihan; Li, Guangmao; Pan, Shilie

Second-Harmonic Generation-Positive Na₂Ga₂SiS₆ with a Broad Band Gap and a High Laser Damage Threshold.

Xie, Wenlong; Yun, Yihan; Deng, Lihan; Li, Guangmao; Pan, Shilie.

Afiliação

Xie W; CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, and Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China.
Yun Y; CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, and Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China.
Deng L; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Li G; CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, and Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China.
Pan S; CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, and Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China.

Inorg Chem ; 61(19): 7546-7552, 2022 May 16.

Article em En | MEDLINE | ID: mdl-35511479

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Inorg Chem Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos

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