High Anisotropic Optoelectronics in Monolayer Binary M<sub>8</sub>X<sub>12</sub> (M = Mo, W; X = S, Se, Te).

Peng, Yi; Zhu, Qianqian; Xu, Wangping; Cao, Juexian

High Anisotropic Optoelectronics in Monolayer Binary M₈X₁₂ (M = Mo, W; X = S, Se, Te).

Peng, Yi; Zhu, Qianqian; Xu, Wangping; Cao, Juexian.

Afiliação

Peng Y; School of Physics and Electronic-Electrical Engineering, Xiangnan University, Chenzhou 423000, P. R. China.
Zhu Q; School of Physics and Electronic-Electrical Engineering, Xiangnan University, Chenzhou 423000, P. R. China.
Xu W; Department of Physics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, P. R. China.
Cao J; Department of Physics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, P. R. China.

ACS Appl Mater Interfaces ; 2022 Jun 06.

Article em En | MEDLINE | ID: mdl-35666942

Palavras-chave

direct band gaps; high mobility; in situ electron-beam irradiation; photoelectric properties; two-dimensional

Texto completo

Adicionar na Minha BVS

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2022 Tipo de documento: Article País de publicação: Estados Unidos

Texto completo

Adicionar na Minha BVS

Imprimir

XML

PubMed Links

Buscar no Google