Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse.

Jiang, Yurong; Zhang, Linlin; Wang, Rui; Li, Hongzhi; Li, Lin; Zhang, Suicai; Li, Xueping; Su, Jian; Song, Xiaohui; Xia, Congxin

Jiang, Yurong; Zhang, Linlin; Wang, Rui; Li, Hongzhi; Li, Lin; Zhang, Suicai; Li, Xueping; Su, Jian; Song, Xiaohui; Xia, Congxin.

Afiliação

Jiang Y; School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China.
Zhang L; School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China.
Wang R; School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China.
Li H; School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China.
Li L; School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China.
Zhang S; School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China.
Li X; School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China.
Su J; School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China.
Song X; School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China.
Xia C; School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China.

ACS Nano ; 16(7): 11218-11226, 2022 07 26.

Article em En | MEDLINE | ID: mdl-35730563

Assuntos

Eletricidade; Sinapses

Palavras-chave

artificial synapses; asymmetric ferroelectric gate; photoelectric memory; reconfigurability; self-rectifying

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Sinapses / Eletricidade Idioma: En Revista: ACS Nano Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos

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