Organismic Memristive Structures With Variable Functionality for Neuroelectronics.

Andreeva, Natalia V; Ryndin, Eugeny A; Mazing, Dmitriy S; Vilkov, Oleg Y; Luchinin, Victor V

Andreeva, Natalia V; Ryndin, Eugeny A; Mazing, Dmitriy S; Vilkov, Oleg Y; Luchinin, Victor V.

Afiliação

Andreeva NV; Department of Micro- and Nanoelectronics, Faculty of Electronics, Saint Petersburg State Electrotechnical University "LETI", Saint Petersburg, Russia.
Ryndin EA; Department of Micro- and Nanoelectronics, Faculty of Electronics, Saint Petersburg State Electrotechnical University "LETI", Saint Petersburg, Russia.
Mazing DS; Department of Micro- and Nanoelectronics, Faculty of Electronics, Saint Petersburg State Electrotechnical University "LETI", Saint Petersburg, Russia.
Vilkov OY; Department of Solid State Electronics, Saint Petersburg State University, Saint Petersburg, Russia.
Luchinin VV; Department of Micro- and Nanoelectronics, Faculty of Electronics, Saint Petersburg State Electrotechnical University "LETI", Saint Petersburg, Russia.

Front Neurosci ; 16: 913618, 2022.

Article em En | MEDLINE | ID: mdl-35774561

Palavras-chave

analog non-volatile and volatile tuning of the resistance; atomic layer deposition; emulation of synaptic plasticity and neural activity; multilevel memristor; nanolayered memristive compositions

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Front Neurosci Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Federação Russa País de publicação: Suíça

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