Your browser doesn't support javascript.
loading
Self-Powered Thermoelectric Hydrogen Sensors Based on Low-Cost Bismuth Sulfide Thin Films: Quick Response at Room Temperature.
Yu, Yan; Hu, Zhenyu; Lien, Shui-Yang; Yu, Yaming; Gao, Peng.
Afiliação
  • Yu Y; Fujian Provincial Key Laboratory of Photoelectric Functional Materials, Institute of Materials Physical Chemistry, Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, College of Materials Science and Engineering, Huaqiao University, Xiamen361021, P.R. China.
  • Hu Z; Xiamen Institute of Rare Earth Materials, Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Chinese Academy of Sciences, Xiamen361021, China.
  • Lien SY; CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao Road West, Fuzhou350002, China.
  • Yu Y; Xiamen Institute of Rare Earth Materials, Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Chinese Academy of Sciences, Xiamen361021, China.
  • Gao P; School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen361024, China.
ACS Appl Mater Interfaces ; 14(42): 47696-47705, 2022 Oct 26.
Article em En | MEDLINE | ID: mdl-36227642
ABSTRACT
Thermoelectric (TE)-based gas sensors have attracted significant attention due to their high selectivity, low power consumption, and minimum maintenance requirements. However, it is challenging to find low-cost, environmentally friendly materials and simple device fabrication processes for large-scale applications. Herein, we report self-powered thermoelectric hydrogen (TEH) sensors based on bismuth sulfide (Bi2S3) fabricated from a low-cost Bi2S3 TE layer and platinum (Pt) catalyst. When working at room temperature, the monomorphic-type TEH sensor obtained an output response signal of 42.2 µV with a response time of 17 s at a 3% hydrogen atmosphere. To further improve device performance, we connected the patterned Bi2S3 films in series to increase the Seebeck coefficient to -897 µV K-1. For comparison, the resulting N tandem-type TEH sensor yielded a distinguished output voltage of 101.4 µV, which was greater than the monomorphic type by a factor of 2.4. Significantly, the response and recovery time of the N-tandem-type TEH sensor to 3% hydrogen were shortened to 14 and 15 s, respectively. This work provides a simple, environmentally friendly, and low-cost strategy for fabricating high-performance TEH sensors by applying low-cost Bi2S3 TE materials.
Palavras-chave

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Health_economic_evaluation Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Health_economic_evaluation Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2022 Tipo de documento: Article