Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators.

Tseng, Chun-Chih; Song, Tiancheng; Jiang, Qianni; Lin, Zhong; Wang, Chong; Suh, Jaehyun; Watanabe, Kenji; Taniguchi, Takashi; McGuire, Michael A; Xiao, Di; Chu, Jiun-Haw; Cobden, David H; Xu, Xiaodong; Yankowitz, Matthew

Tseng, Chun-Chih; Song, Tiancheng; Jiang, Qianni; Lin, Zhong; Wang, Chong; Suh, Jaehyun; Watanabe, Kenji; Taniguchi, Takashi; McGuire, Michael A; Xiao, Di; Chu, Jiun-Haw; Cobden, David H; Xu, Xiaodong; Yankowitz, Matthew.

Afiliação

McGuire MA; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States.
Xiao D; Pacific Northwest National Laboratory, Richland, Washington99354, United States.

Nano Lett ; 22(21): 8495-8501, 2022 Nov 09.

Article em En | MEDLINE | ID: mdl-36279401

Palavras-chave

2D magnet; graphene; modulation doping; proximity effect; van der Waals heterostructure

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2022 Tipo de documento: Article País de publicação: Estados Unidos

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