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Low Trap Density Para-F Substituted 2D PEA2PbX4 (X = Cl, Br, I) Single Crystals with Tunable Optoelectrical Properties and High Sensitive X-Ray Detector Performance.
Di, Jiayu; Li, Haojin; Chen, Li; Zhang, Siyu; Hu, Yinhui; Sun, Kai; Peng, Bo; Su, Jie; Zhao, Xue; Fan, Yuqi; Lin, Zhenhua; Hao, Yue; Gao, Peng; Zhao, Kui; Chang, Jingjing.
Afiliação
  • Di J; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 710071 Xi'an, China.
  • Li H; Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, 710071 Xi'an, China.
  • Chen L; Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, 710119 Xi'an, China.
  • Zhang S; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 710071 Xi'an, China.
  • Hu Y; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 710071 Xi'an, China.
  • Sun K; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 710071 Xi'an, China.
  • Peng B; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 710071 Xi'an, China.
  • Su J; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 710071 Xi'an, China.
  • Zhao X; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 710071 Xi'an, China.
  • Fan Y; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 710071 Xi'an, China.
  • Lin Z; CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China.
  • Hao Y; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 710071 Xi'an, China.
  • Gao P; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 710071 Xi'an, China.
  • Zhao K; CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China.
  • Chang J; Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, 710119 Xi'an, China.
Research (Wash D C) ; 2022: 9768019, 2022.
Article em En | MEDLINE | ID: mdl-36320633

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Diagnostic_studies Idioma: En Revista: Research (Wash D C) Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Diagnostic_studies Idioma: En Revista: Research (Wash D C) Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos