Low-power multilevel resistive switching inß-Ga2O3based RRAM devices.

Velpula, Ravi Teja; Jain, Barsha; Nguyen, Hieu Pham Trung

Low-power multilevel resistive switching inß-Ga₂O₃based RRAM devices.

Velpula, Ravi Teja; Jain, Barsha; Nguyen, Hieu Pham Trung.

Afiliação

Velpula RT; Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, NJ, 07102, United States of America.
Jain B; Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, NJ, 07102, United States of America.
Nguyen HPT; Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, NJ, 07102, United States of America.

Nanotechnology ; 34(7)2022 Dec 02.

Article em En | MEDLINE | ID: mdl-36399780

Palavras-chave

Ga2O3; RRAM; multilevel resistive switching

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Reino Unido

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