Mexican-hat dispersions and high carrier mobility of Î³-SnX (X = O, S, Se, Te) single-layers: a first-principles investigation.

Tuan, Vu V; Lavrentyev, A A; Khyzhun, O Y; Binh, Nguyen T T; Hieu, Nguyen V; Kartamyshev, A I; Hieu, Nguyen N

Tuan, Vu V; Lavrentyev, A A; Khyzhun, O Y; Binh, Nguyen T T; Hieu, Nguyen V; Kartamyshev, A I; Hieu, Nguyen N.

Afiliação

Tuan VV; Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City, Vietnam. tuan.vu@vlu.edu.vn.
Lavrentyev AA; Faculty of Mechanical - Electrical and Computer Engineering, Van Lang University, Ho Chi Minh City, Vietnam.
Khyzhun OY; Department of Electrical Engineering and Electronics, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don, Russian Federation.
Binh NTT; Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanovsky Street, UA-03142 Kyiv, Ukraine.
Hieu NV; Faculty of Basic Sciences, Quang Binh University, Quang Binh 510000, Vietnam.
Kartamyshev AI; Department of Physics, The University of Da Nang, University of Science and Education, Da Nang 550000, Vietnam.
Hieu NN; Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City, Vietnam. tuan.vu@vlu.edu.vn.

Phys Chem Chem Phys ; 24(47): 29064-29073, 2022 Dec 07.

Article em En | MEDLINE | ID: mdl-36437803

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE País/Região como assunto: Mexico Idioma: En Revista: Phys Chem Chem Phys Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Vietnã País de publicação: Reino Unido

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