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Effect of Growth Temperature and Atmosphere Exposure Time on Impurity Incorporation in Sputtered Mg, Al, and Ca Thin Films.
Aliramaji, Shamsa; Keuter, Philipp; Neuß, Deborah; Hans, Marcus; Primetzhofer, Daniel; Depla, Diederik; Schneider, Jochen M.
Afiliação
  • Aliramaji S; Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen, Germany.
  • Keuter P; Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen, Germany.
  • Neuß D; Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen, Germany.
  • Hans M; Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen, Germany.
  • Primetzhofer D; Department of Physics and Astronomy, Uppsala University, Box 516, S-75120 Uppsala, Sweden.
  • Depla D; Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), B-9000 Gent, Belgium.
  • Schneider JM; Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen, Germany.
Materials (Basel) ; 16(1)2023 Jan 01.
Article em En | MEDLINE | ID: mdl-36614754
ABSTRACT
Impurities can be incorporated during thin film deposition, but also can originate from atmosphere exposure. As impurities can strongly affect the composition-structure-property relations in magnetron sputter deposited thin films, it is important to distinguish between both incorporation channels. Therefore, the impurity incorporation by atmosphere exposure into sputtered Mg, Al, and Ca thin films is systematically studied by a variation of the deposition temperatures and atmosphere exposure times. Deposition temperature variation results in morphological modifications explained by considering surface and bulk diffusion as well as grain boundary motion and evaporation. The film morphologies exhibiting the lowest oxygen concentrations, as measured by energy dispersive X-ray spectroscopy, are obtained at a homologous temperature of 0.4 for both Mg and Al thin films. For Ca, preventing atmosphere exposure is essential to hinder impurity incorporation By comparing the impurity concentration in Al-capped and uncapped thin films, it is demonstrated that Ca thin films are locally protected by Al-capping, while Mg (and Al) form native passivation layers. Furthermore, it can be learned that the capping (or self-passivation) efficiency in terms of hindering further oxidation of the films in atmosphere is strongly dependent on the underlying morphology, which in turn is defined by the growth temperature.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Alemanha

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Alemanha