Synaptic and Gradual Conductance Switching Behaviors in CeO<sub>2</sub>/Nb-SrTiO<sub>3</sub> Heterojunction Memristors for Electrocardiogram Signal Recognition.

Li, Hangfei; Geng, Sunyingyue; Liu, Tong; Cao, MingHui; Su, Jie

Synaptic and Gradual Conductance Switching Behaviors in CeO₂/Nb-SrTiO₃ Heterojunction Memristors for Electrocardiogram Signal Recognition.

Li, Hangfei; Geng, Sunyingyue; Liu, Tong; Cao, MingHui; Su, Jie.

Afiliação

Li H; College of Physics Science, Qingdao University, Qingdao266071, People's Republic of China.
Geng S; College of Physics Science, Qingdao University, Qingdao266071, People's Republic of China.
Liu T; College of Physics Science, Qingdao University, Qingdao266071, People's Republic of China.
Cao M; College of Physics Science, Qingdao University, Qingdao266071, People's Republic of China.
Su J; College of Physics Science, Qingdao University, Qingdao266071, People's Republic of China.

ACS Appl Mater Interfaces ; 15(4): 5456-5465, 2023 Feb 01.

Article em En | MEDLINE | ID: mdl-36662834

Assuntos

Plasticidade Neuronal; Nióbio; Redes Neurais de Computação; Aprendizagem; Eletrocardiografia

Palavras-chave

BCM rules; artificial synapses; electrocardiogram recognition; heterojunction; memristor

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Plasticidade Neuronal / Nióbio Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2023 Tipo de documento: Article País de publicação: Estados Unidos

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