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Sr(Ag1-x Lix )2 Se2 and [Sr3 Se2 ][(Ag1-x Lix )2 Se2 ] Tunable Direct Band Gap Semiconductors.
Zhou, Xiuquan; Wilfong, Brandon; Chen, Xinglong; Laing, Craig; Pandey, Indra R; Chen, Ying-Pin; Chen, Yu-Sheng; Chung, Duck-Young; Kanatzidis, Mercouri G.
Afiliação
  • Zhou X; Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, IL 60439, USA.
  • Wilfong B; United States Naval Academy, 121 Blake Rd, Annapolis, MD 21402, USA.
  • Chen X; Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, IL 60439, USA.
  • Laing C; Department of Chemistry, Northwestern University, Evanston, IL 60208, USA.
  • Pandey IR; Department of Chemistry, Northwestern University, Evanston, IL 60208, USA.
  • Chen YP; NSF's ChemMatCARS, the University of Chicago, 9700 South Cass Avenue, Argonne, IL 60439, USA.
  • Chen YS; NSF's ChemMatCARS, the University of Chicago, 9700 South Cass Avenue, Argonne, IL 60439, USA.
  • Chung DY; Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, IL 60439, USA.
  • Kanatzidis MG; Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, IL 60439, USA.
Angew Chem Int Ed Engl ; 62(14): e202301191, 2023 Mar 27.
Article em En | MEDLINE | ID: mdl-36705521

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Angew Chem Int Ed Engl Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Angew Chem Int Ed Engl Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos