Optimization of Alkyl Side Chain Length in Polyimide for Gate Dielectrics to Achieve High Mobility and Outstanding Operational Stability in Organic Transistors.

Wang, Baotieliang; Xu, Ting; Yu, Bo; Zou, Jiawei; Luan, Shifang

Wang, Baotieliang; Xu, Ting; Yu, Bo; Zou, Jiawei; Luan, Shifang.

Afiliação

Wang B; State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin130022, P. R. China.
Xu T; University of Science and Technology of China, Hefei, Anhui230026, P. R. China.
Yu B; College of Electronic and Information Engineering, Qingdao University, Qingdao, Shandong266071, P. R. China.
Zou J; State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin130022, P. R. China.
Luan S; State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin130022, P. R. China.

ACS Appl Mater Interfaces ; 15(5): 7204-7216, 2023 Feb 08.

Article em En | MEDLINE | ID: mdl-36709451

Palavras-chave

alkyl side chains; gate dielectrics; high mobility; organic thin-film transistors; outstanding operational stability; polyimide

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2023 Tipo de documento: Article País de publicação: Estados Unidos

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