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Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides.
Zheng, Peiming; Wei, Wenya; Liang, Zhihua; Qin, Biao; Tian, Jinpeng; Wang, Jinhuan; Qiao, Ruixi; Ren, Yunlong; Chen, Junting; Huang, Chen; Zhou, Xu; Zhang, Guangyu; Tang, Zhilie; Yu, Dapeng; Ding, Feng; Liu, Kaihui; Xu, Xiaozhi.
Afiliação
  • Zheng P; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631, China.
  • Wei W; Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631, China.
  • Liang Z; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631, China.
  • Qin B; Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631, China.
  • Tian J; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631, China.
  • Wang J; Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631, China.
  • Qiao R; State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
  • Ren Y; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Chen J; State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
  • Huang C; International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871, China.
  • Zhou X; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631, China.
  • Zhang G; Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631, China.
  • Tang Z; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631, China.
  • Yu D; Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631, China.
  • Ding F; State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
  • Liu K; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631, China.
  • Xu X; Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631, China.
Nat Commun ; 14(1): 592, 2023 Feb 03.
Article em En | MEDLINE | ID: mdl-36737606
ABSTRACT
The great challenge for the growth of non-centrosymmetric 2D single crystals is to break the equivalence of antiparallel grains. Even though this pursuit has been partially achieved in boron nitride and transition metal dichalcogenides (TMDs) growth, the key factors that determine the epitaxy of non-centrosymmetric 2D single crystals are still unclear. Here we report a universal methodology for the epitaxy of non-centrosymmetric 2D metal dichalcogenides enabled by accurate time sequence control of the simultaneous formation of grain nuclei and substrate steps. With this methodology, we have demonstrated the epitaxy of unidirectionally aligned MoS2 grains on a, c, m, n, r and v plane Al2O3 as well as MgO and TiO2 substrates. This approach is also applicable to many TMDs, such as WS2, NbS2, MoSe2, WSe2 and NbSe2. This study reveals a robust mechanism for the growth of various 2D single crystals and thus paves the way for their potential applications.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China