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Harvesting microwave energy using pyroelectricity of nanostructured graphene/zirconium-doped hafnium oxide ferroelectric heterostructures.
Dragoman, Mircea; Aldrigo, Martino; Dinescu, Adrian; Vasilache, Dan; Iordanescu, Sergiu; Dragoman, Daniela; Laudadio, Emiliano; Pavoni, Eleonora.
Afiliação
  • Dragoman M; National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae Street 126A, 077190 Voluntari (Ilfov), Romania.
  • Aldrigo M; National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae Street 126A, 077190 Voluntari (Ilfov), Romania.
  • Dinescu A; National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae Street 126A, 077190 Voluntari (Ilfov), Romania.
  • Vasilache D; National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae Street 126A, 077190 Voluntari (Ilfov), Romania.
  • Iordanescu S; National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae Street 126A, 077190 Voluntari (Ilfov), Romania.
  • Dragoman D; Univ. of Bucharest, Physics Faculty, PO Box MG-11, 077125 Bucharest, Romania.
  • Laudadio E; Academy of Romanian Scientists, Str. Ilfov, Nr. 3, 050044 Bucharest, Romania.
  • Pavoni E; Department of Materials, Environmental Sciences and Urban Planning, Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona, Italy.
Nanotechnology ; 34(20)2023 Mar 06.
Article em En | MEDLINE | ID: mdl-36801826
ABSTRACT
In this work, we present the design, atomistic/circuit/electromagnetic simulations, and the experimental results for graphene monolayer/zirconium-doped hafnium oxide (HfZrO) ultra-thin ferroelectric-based field effect transistors fabricated at the wafer scale, regarding the pyroelectricity generation directly from microwave signals, at room temperature and below it, namely at 218 K and at 100 K. The transistors work like energy harvesters, i.e. they collect low-power microwave energy and transform it into DC voltages with a maximum amplitude between 20 and 30 mV. The same devices function as microwave detectors in the band 1-10.4 GHz and at very low input power levels not exceeding 80µW when they are biased by using a drain voltage, with average responsivity values in the range 200-400 mV mW-1.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Romênia

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Romênia