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High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process.
Kim, Hyunseok; Liu, Yunpeng; Lu, Kuangye; Chang, Celesta S; Sung, Dongchul; Akl, Marx; Qiao, Kuan; Kim, Ki Seok; Park, Bo-In; Zhu, Menglin; Suh, Jun Min; Kim, Jekyung; Jeong, Junseok; Baek, Yongmin; Ji, You Jin; Kang, Sungsu; Lee, Sangho; Han, Ne Myo; Kim, Chansoo; Choi, Chanyeol; Zhang, Xinyuan; Choi, Hyeong-Kyu; Zhang, Yanming; Wang, Haozhe; Kong, Lingping; Afeefah, Nordin Noor; Ansari, Mohamed Nainar Mohamed; Park, Jungwon; Lee, Kyusang; Yeom, Geun Young; Kim, Sungkyu; Hwang, Jinwoo; Kong, Jing; Bae, Sang-Hoon; Shi, Yunfeng; Hong, Suklyun; Kong, Wei; Kim, Jeehwan.
Afiliação
  • Kim H; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Liu Y; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Lu K; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Chang CS; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Sung D; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Akl M; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Qiao K; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim KS; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Park BI; Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea.
  • Zhu M; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA.
  • Suh JM; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Jeong J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Baek Y; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Ji YJ; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kang S; Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA.
  • Lee S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Han NM; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim C; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Choi C; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Zhang X; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Choi HK; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Zhang Y; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA.
  • Wang H; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea.
  • Kong L; School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea.
  • Afeefah NN; Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, Republic of Korea.
  • Ansari MNM; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Park J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Lee K; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Yeom GY; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Hwang J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kong J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Bae SH; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Shi Y; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Hong S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kong W; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim J; Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea.
Nat Nanotechnol ; 18(5): 464-470, 2023 May.
Article em En | MEDLINE | ID: mdl-36941360
ABSTRACT
Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III-N and III-V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Nanotechnol Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Nanotechnol Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos
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