Ultrasensitive Near-Infrared InAs Colloidal Quantum Dot-ZnON Hybrid Phototransistor Based on a Gradated Band Structure.
Adv Sci (Weinh)
; 10(18): e2207526, 2023 Jun.
Article
em En
| MEDLINE
| ID: mdl-37088787
ABSTRACT
Amorphous metal oxide semiconductor phototransistors (MOTPs) integrated with colloidal quantum dots (QDs) (QD-MOTPs) are promising infrared photodetectors owing to their high photoconductive gain, low off-current level, and high compatibility with pixel circuits. However, to date, the poor mobility of conventional MOTPs, such as indium gallium zinc oxide (IGZO), and the toxicity of lead (Pb)-based QDs, such as lead sulfide and lead selenide, has limited the commercial applications of QD-MOTPs. Herein, an ultrasensitive QD-MOTP fabricated by integrating a high-mobility zinc oxynitride (ZnON)-based MOTP and lead-free indium arsenide (InAs) QDs is demonstrated. A new gradated bandgap structure is introduced in the InAs QD layer that absorbs infrared light, which prevents carriers from moving backward and effectively reduces electron-hole recombination. Chemical, optical, and structural analyses confirm the movement of the photoexcited carriers in the graded band structure. The novel QD-MOTP exhibits an outstanding performance with a responsivity of 1.15 × 105 A W-1 and detectivity of 5.32 × 1016 Jones at a light power density of 2 µW cm-2 under illumination at 905 nm.
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01-internacional
Base de dados:
MEDLINE
Assunto principal:
Pontos Quânticos
Idioma:
En
Revista:
Adv Sci (Weinh)
Ano de publicação:
2023
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Article