Enabling Stable Zn Anodes by Molecularly Engineering the Inner Helmholtz Plane with Amphiphilic Dibenzenesulfonimide Additive.
Adv Sci (Weinh)
; 10(22): e2301785, 2023 Aug.
Article
em En
| MEDLINE
| ID: mdl-37203289
ABSTRACT
The notorious dendrite growth and hydrogen evolution reaction (HER) are considered as main barriers that hinder the stability of the Zn-metal anode. Herein, molecular engineering is conducted to optimize the inner Helmholtz plane with a trace of amphiphilic dibenzenesulfonimide (BBI) in an aqueous electrolyte. Both experimental and computational results reveal that the BBI- binds strongly with Zn2+ to form {Zn(BBI)(H2 O)4 }+ in the electrical double layer and reduces the water supply to the Zn anode. During the electroplating process, {Zn(BBI)(H2 O)4 }+ is "compressed" to the Zn anode/electrolyte interface by Zn2+ flow, and accumulated and adsorbed on the surface of the Zn anode to form a dynamic water-poor inner Helmholtz plane to inhibit HER. Meanwhile, the{Zn(BBI)(H2 O)4 }+ on the Zn anode surface possesses an even distribution, delivering uniform Zn2+ flow for smooth deposition without Zn dendrite growth. Consequently, the stability of the Zn anode is largely improved with merely 0.02 M BBI- to the common electrolyte of 1 M ZnSO4 . The assembled Zn||Zn symmetric cell can be cycled for more than 1180 h at 5 mA cm-2 and 5 mA h cm-2 . Besides, the practicability in Zn||NaV3 O8 ·1.5 H2 O full cell is evaluated, which suggests efficient storage even under a high mass loading of 12 mg cm-2 .
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Adv Sci (Weinh)
Ano de publicação:
2023
Tipo de documento:
Article
País de afiliação:
China