Improved Endurance of Ferroelectric Hf0.5Zr0.5O2 Using Laminated-Structure Interlayer.
Nanomaterials (Basel)
; 13(10)2023 May 11.
Article
em En
| MEDLINE
| ID: mdl-37242025
ABSTRACT
In this article, the endurance characteristic of the TiN/HZO/TiN capacitor was improved by the laminated structure of a ferroelectric Hf0.5Zr0.5O2 thin film. Altering the HZO deposition ratio, the laminated-structure interlayer was formed in the middle of the HZO film. Although small remanent polarization reduction was observed in the capacitor with a laminated structure, the endurance characteristic was improved by two orders of magnitude (from 106 to 108 cycles). Moreover, the leakage current of the TiN/HZO/TiN capacitor with the laminated-structure interlayer was reduced by one order of magnitude. The reliability enhancement was proved by the Time-Dependent Dielectric Breakdown (TDDB) test, and the optimization results were attributed to the migration inhibition and nonuniform distribution of oxygen vacancies. Without additional materials and a complicated process, the laminated-structure method provides a feasible strategy for improving HZO device reliability.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanomaterials (Basel)
Ano de publicação:
2023
Tipo de documento:
Article
País de afiliação:
China