Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications.

Hu, Hongyang; Feng, Chuancai; Zhou, Haiyang; Dong, Danian; Pan, Xiaoshan; Wang, Xiwei; Zhang, Lu; Cheng, Shuaiqi; Pang, Wan; Liu, Jing

Hu, Hongyang; Feng, Chuancai; Zhou, Haiyang; Dong, Danian; Pan, Xiaoshan; Wang, Xiwei; Zhang, Lu; Cheng, Shuaiqi; Pang, Wan; Liu, Jing.

Afiliação

Hu H; State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
Feng C; University of Chinese Academy of Sciences, Beijing 101408, China.
Zhou H; Institute of Advanced Technology, University of Science and Technology of China, Hefei 230031, China.
Dong D; State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
Pan X; University of Chinese Academy of Sciences, Beijing 101408, China.
Wang X; State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
Zhang L; University of Chinese Academy of Sciences, Beijing 101408, China.
Cheng S; State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
Pang W; University of Chinese Academy of Sciences, Beijing 101408, China.
Liu J; Institute of Advanced Technology, University of Science and Technology of China, Hefei 230031, China.

Micromachines (Basel) ; 14(6)2023 May 31.

Article em En | MEDLINE | ID: mdl-37374760

Palavras-chave

NOR-Flash; artificial intelligence; computing-in-memory (CIM); convolutional neural network

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China País de publicação: Suíça

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