Phosphinecarboxamide based InZnP QDs - an air tolerant route to luminescent III-V semiconductors.

Wang, Yi; Howley, Jack; Faria, Erica N; Huang, Chen; Carter-Searjeant, Sadie; Fairclough, Simon; Kirkland, Angus; Davis, Jason J; Naz, Falak; Sajjad, Muhammad Tariq; Goicoechea, Jose M; Green, Mark

Wang, Yi; Howley, Jack; Faria, Erica N; Huang, Chen; Carter-Searjeant, Sadie; Fairclough, Simon; Kirkland, Angus; Davis, Jason J; Naz, Falak; Sajjad, Muhammad Tariq; Goicoechea, Jose M; Green, Mark.

Afiliação

Wang Y; Department of Physics, King's College London, The Strand, London, WC2R 2LS, UK. mark.a.green@kcl.ac.uk.
Howley J; Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, UK.
Faria EN; Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA, UK.
Huang C; Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK.
Carter-Searjeant S; Electron Physical Sciences Imaging Centre, Diamond Light Source, Harwell Science Innovation Campus. Fermi Ave, Didcot, OX110DE, UK.
Fairclough S; Department of Physics, King's College London, The Strand, London, WC2R 2LS, UK. mark.a.green@kcl.ac.uk.
Kirkland A; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK.
Davis JJ; Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK.
Naz F; Electron Physical Sciences Imaging Centre, Diamond Light Source, Harwell Science Innovation Campus. Fermi Ave, Didcot, OX110DE, UK.
Sajjad MT; Physical and Theoretical Chemistry Laboratory, South Parks Road, Oxford, OX1 3QZ, UK.
Goicoechea JM; London Centre for Energy Engineering (LCEE), School of Engineering, London South Bank University, 103 Borough Road, London, SE1 0AA, UK.
Green M; London Centre for Energy Engineering (LCEE), School of Engineering, London South Bank University, 103 Borough Road, London, SE1 0AA, UK.

Nanoscale Horiz ; 8(10): 1411-1416, 2023 Sep 26.

Article em En | MEDLINE | ID: mdl-37496490

ABSTRACT

ABSTRACT

We describe a new synthetic methodology for the preparation of high quality, emission tuneable InP-based quantum dots (QDs) using a solid, air- and moisture-tolerant primary phosphine as a group-V precursor. This presents a significantly simpler synthetic pathway compared to the state-of-the-art precursors currently employed in phosphide quantum dot synthesis which are volatile, dangerous and air-sensitive, e.g. P(Si(CH3)3)3.

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Horiz Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Reino Unido País de publicação: ENGLAND / ESCOCIA / GB / GREAT BRITAIN / INGLATERRA / REINO UNIDO / SCOTLAND / UK / UNITED KINGDOM

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