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Ultrafast exciton fluid flow in an atomically thin MoS2 semiconductor.
Del Águila, Andrés Granados; Wong, Yi Ren; Wadgaonkar, Indrajit; Fieramosca, Antonio; Liu, Xue; Vaklinova, Kristina; Dal Forno, Stefano; Do, T Thu Ha; Wei, Ho Yi; Watanabe, K; Taniguchi, T; Novoselov, Kostya S; Koperski, Maciej; Battiato, Marco; Xiong, Qihua.
Afiliação
  • Del Águila AG; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore. andres.granados.delaguila@gmail.com.
  • Wong YR; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
  • Wadgaonkar I; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
  • Fieramosca A; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
  • Liu X; Institutes of Physical Science and Information Technology, Anhui University, Hefei, P.R. China.
  • Vaklinova K; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.
  • Dal Forno S; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
  • Do TTH; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Wei HY; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.
  • Watanabe K; Department of Physics, National University of Singapore, Singapore, Singapore.
  • Taniguchi T; National Institute for Materials Science, Tsukuba, Japan.
  • Novoselov KS; National Institute for Materials Science, Tsukuba, Japan.
  • Koperski M; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.
  • Battiato M; Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
  • Xiong Q; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.
Nat Nanotechnol ; 18(9): 1012-1019, 2023 Sep.
Article em En | MEDLINE | ID: mdl-37524907
Excitons (coupled electron-hole pairs) in semiconductors can form collective states that sometimes exhibit spectacular nonlinear properties. Here, we show experimental evidence of a collective state of short-lived excitons in a direct-bandgap, atomically thin MoS2 semiconductor whose propagation resembles that of a classical liquid as suggested by the nearly uniform photoluminescence through the MoS2 monolayer regardless of crystallographic defects and geometric constraints. The exciton fluid flows over ultralong distances (at least 60 µm) at a speed of ~1.8 × 107 m s-1 (~6% the speed of light). The collective phase emerges above a critical laser power, in the absence of free charges and below a critical temperature (usually Tc ≈ 150 K) approaching room temperature in hexagonal-boron-nitride-encapsulated devices. Our theoretical simulations suggest that momentum is conserved and local equilibrium is achieved among excitons; both these features are compatible with a fluid dynamics description of the exciton transport.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Nanotechnol Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Singapura País de publicação: Reino Unido

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Nanotechnol Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Singapura País de publicação: Reino Unido