Selective-Area Growth of Vertical InGaAs/GaSb Core-Shell Nanowires on Silicon and Dual Switching Properties.

Gamo, Hironori; Lian, Chen; Motohisa, Junichi; Tomioka, Katsuhiro

Gamo, Hironori; Lian, Chen; Motohisa, Junichi; Tomioka, Katsuhiro.

Afiliação

Gamo H; Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan.
Lian C; Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-0813, Japan.
Motohisa J; Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan.
Tomioka K; Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-0813, Japan.

ACS Nano ; 17(18): 18346-18351, 2023 Sep 26.

Article em En | MEDLINE | ID: mdl-37615535

Palavras-chave

InGaAs/GaSb; diode; nanowire; selective-area growth; transistor

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Japão

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