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Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications.
Zhang, Meng; Chen, Yilin; Guo, Siyin; Lu, Hao; Zhu, Qing; Mi, Minhan; Wu, Mei; Hou, Bin; Yang, Ling; Ma, Xiaohua; Hao, Yue.
Afiliação
  • Zhang M; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Chen Y; Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Guo S; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Lu H; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Zhu Q; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Mi M; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Wu M; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Hou B; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Yang L; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Ma X; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Hao Y; School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines (Basel) ; 14(8)2023 Jul 28.
Article em En | MEDLINE | ID: mdl-37630049
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China País de publicação: Suíça
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China País de publicação: Suíça