Reversal of Band-Ordering Leads to High Hole Mobility in Strained <i>p</i>-type Scandium Nitride.

Rudra, Sourav; Rao, Dheemahi; Poncé, Samuel; Saha, Bivas

Reversal of Band-Ordering Leads to High Hole Mobility in Strained p-type Scandium Nitride.

Rudra, Sourav; Rao, Dheemahi; Poncé, Samuel; Saha, Bivas.

Afiliação

Rudra S; Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India.
Rao D; International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India.
Poncé S; Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India.
Saha B; International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India.

Nano Lett ; 23(17): 8211-8217, 2023 Sep 13.

Article em En | MEDLINE | ID: mdl-37643148

Palavras-chave

Boltzmann transport; Carrier Transport; Electron−phonon Coupling; First-principles Calculations; Ionized Impurity Scattering; Scandium Nitride (ScN); Strain-induced Band-ordering Reversal

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Índia País de publicação: Estados Unidos

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