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Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs.
Shin, Ki-Yong; Shin, Ju-Won; Amir, Walid; Chakraborty, Surajit; Shim, Jae-Phil; Lee, Sang-Tae; Jang, Hyunchul; Shin, Chan-Soo; Kwon, Hyuk-Min; Kim, Tae-Woo.
Afiliação
  • Shin KY; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan 44610, Republic of Korea.
  • Shin JW; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan 44610, Republic of Korea.
  • Amir W; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan 44610, Republic of Korea.
  • Chakraborty S; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan 44610, Republic of Korea.
  • Shim JP; Korea Advanced Nano Fab Center, Suwon-si 16229, Republic of Korea.
  • Lee ST; Korea Advanced Nano Fab Center, Suwon-si 16229, Republic of Korea.
  • Jang H; Korea Advanced Nano Fab Center, Suwon-si 16229, Republic of Korea.
  • Shin CS; Korea Advanced Nano Fab Center, Suwon-si 16229, Republic of Korea.
  • Kwon HM; Department of Semiconductor Processing Equipment, Semiconductor Convergence Campus of Korea Polytechnics, Anseong-si 17550, Republic of Korea.
  • Kim TW; Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan 44610, Republic of Korea.
Materials (Basel) ; 16(18)2023 Sep 09.
Article em En | MEDLINE | ID: mdl-37763415

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Materials (Basel) Ano de publicação: 2023 Tipo de documento: Article País de publicação: Suíça

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Materials (Basel) Ano de publicação: 2023 Tipo de documento: Article País de publicação: Suíça