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Nonvolatile Memory Organic Light-Emitting Transistors.
Xu, Meili; Zhao, Changbin; Meng, Zhimin; Yan, Hao; Chen, Hongming; Jiang, Zhixiang; Jiang, Zhuonan; Chen, Hong; Meng, Lingqiang; Hui, Wei; Su, Zhenhuang; Wang, Yueyue; Wang, Zhenhui; Wang, Jianing; Gao, Yuanhong; He, Yaowu; Meng, Hong.
Afiliação
  • Xu M; School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
  • Zhao C; School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
  • Meng Z; School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
  • Yan H; School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
  • Chen H; College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, China.
  • Jiang Z; Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China.
  • Jiang Z; School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
  • Chen H; School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
  • Meng L; School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
  • Hui W; Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China.
  • Su Z; Shanghai Synchrotron Radiation Facility, Zhangjiang Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201204, China.
  • Wang Y; School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
  • Wang Z; School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
  • Wang J; Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China.
  • Gao Y; School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
  • He Y; School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
  • Meng H; School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
Adv Mater ; 35(48): e2307703, 2023 Nov.
Article em En | MEDLINE | ID: mdl-37812077
In the field of active-matrix organic light emitting display (AMOLED), large-size and ultra-high-definition AMOLED applications have escalated the demand for the integration density of driver chips. However, as Moore's Law approaches the limit, the traditional technology of improving integration density that relies on scaling down device dimension is facing a huge challenge. Thus, developing a multifunctional and highly integrated device is a promising route for improving the integration density of pixel circuits. Here, a novel nonvolatile memory ferroelectric organic light-emitting transistor (Fe-OLET) device which integrates the switching capability, light-emitting capability and nonvolatile memory function into a single device is reported. The nonvolatile memory function of Fe-OLET is achieved through the remnant polarization property of ferroelectric polymer, enabling the device to maintain light emission at zero gate bias. The reliable nonvolatile memory operations are also demonstrated. The proof-of-concept device optimized through interfacial modification approach exhibits 20 times improved field-effect mobility and five times increased luminance. The integration of nonvolatile memory, switching and light-emitting capabilities within Fe-OLET provides a promising internal-storage-driving paradigm, thus creating a new pathway for deploying storage capacitor-free circuitry to improve the pixel aperture ratio and the integration density of circuits toward the on-chip advanced display applications.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China País de publicação: Alemanha

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China País de publicação: Alemanha