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Graphene/silicon heterojunction for reconfigurable phase-relevant activation function in coherent optical neural networks.
Zhong, Chuyu; Liao, Kun; Dai, Tianxiang; Wei, Maoliang; Ma, Hui; Wu, Jianghong; Zhang, Zhibin; Ye, Yuting; Luo, Ye; Chen, Zequn; Jian, Jialing; Sun, Chunlei; Tang, Bo; Zhang, Peng; Liu, Ruonan; Li, Junying; Yang, Jianyi; Li, Lan; Liu, Kaihui; Hu, Xiaoyong; Lin, Hongtao.
Afiliação
  • Zhong C; State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Liao K; State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
  • Dai T; State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
  • Wei M; State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Ma H; State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Wu J; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China.
  • Zhang Z; Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China.
  • Ye Y; State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
  • Luo Y; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China.
  • Chen Z; Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China.
  • Jian J; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China.
  • Sun C; Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China.
  • Tang B; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China.
  • Zhang P; Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China.
  • Liu R; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China.
  • Li J; Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China.
  • Yang J; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China.
  • Li L; Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China.
  • Liu K; Institute of Microelectronics of the Chinese Academy of Sciences, 100029, Beijing, China.
  • Hu X; Institute of Microelectronics of the Chinese Academy of Sciences, 100029, Beijing, China.
  • Lin H; Institute of Microelectronics of the Chinese Academy of Sciences, 100029, Beijing, China.
Nat Commun ; 14(1): 6939, 2023 Oct 31.
Article em En | MEDLINE | ID: mdl-37907477
ABSTRACT
Optical neural networks (ONNs) herald a new era in information and communication technologies and have implemented various intelligent applications. In an ONN, the activation function (AF) is a crucial component determining the network performances and on-chip AF devices are still in development. Here, we first demonstrate on-chip reconfigurable AF devices with phase activation fulfilled by dual-functional graphene/silicon (Gra/Si) heterojunctions. With optical modulation and detection in one device, time delays are shorter, energy consumption is lower, reconfigurability is higher and the device footprint is smaller than other on-chip AF strategies. The experimental modulation voltage (power) of our Gra/Si heterojunction achieves as low as 1 V (0.5 mW), superior to many pure silicon counterparts. In the photodetection aspect, a high responsivity of over 200 mA/W is realized. Special nonlinear functions generated are fed into a complex-valued ONN to challenge handwritten letters and image recognition tasks, showing improved accuracy and potential of high-efficient, all-component-integration on-chip ONN. Our results offer new insights for on-chip ONN devices and pave the way to high-performance integrated optoelectronic computing circuits.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China
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